Electron-phonon interaction effects on the surface states in wurtzite nitride semiconductors |
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Authors: | ZW Yan Genxiao Li |
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Institution: | College of Sciences, Inner Mongolia Agricultural University, Hohhot 010018, PR China |
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Abstract: | A variational approach is used to study the surface states of an electron in a semi-infinite wurtzite nitride semiconductor. The surface-state energy of the electron is calculated, by taking the effects of the electron-surface optical phonon interaction and structure anisotropy into account. The numerical computation has been performed for the energies of the electronic surface states as a function of the surface potential V0 for wurtzite GaN, AlN, and InN, respectively. The results show that the electron-phonon interaction lowers the surface state energy. It is also found that the energies of the electronic surface-state in wurtzite structures are lower than that in the zinc-blende structures by hundreds of meV for the materials calculated. The influence of e-p-interactions on the surface state of electron cannot be neglected. |
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Keywords: | 63 20 Kr 71 38 &minus k 73 20 &minus r 78 30 Fs |
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