Chemical bath-deposited ZnS thin films: Preparation and characterization |
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| Authors: | Liu Qi Guobing Mao |
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| Institution: | a Department of Mechanical Engineering, Anhui University of Technology and Science, 8 Zheshan Road, Anhui Wuhu, 241000, China
b Institute of Photo-electronic Thin Film Devices and Technique of Nankai University, Tianjin 300071, China |
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| Abstract: | Chemical bath deposition of ZnS thin films from NH3/SC(NH2)2/ZnSO4 solutions has been studied. The effect of various process parameters on the growth and the film quality are presented. The influence on the growth rate of solution composition and the structural, optical properties of the ZnS thin films deposited by this method have been studied. The XRF analysis confirmed that volume of oxygen of the as-deposited film is very high. The XRD analysis of as-deposited films shows that the films are cubic ZnS structure. The XRD analysis of annealed films shows the annealed films are cubic ZnS and ZnO mixture structure. Those results confirmed that the as-deposited films have amorphous Zn(OH)2. SEM studies of the ZnS thin films grown on various growth phases show that ZnS film formed in the none-film phase is discontinuous. ZnS film formed in quasi-linear phase shows a compact and a granular structure with the grain size about 100 nm. There are adsorbed particles on films formed in the saturation phase. Transmission measurement shows that an optical transmittance is about 90% when the wavelength over 500 nm. The band gap (Eg) value of the deposited film is about 3.51 eV. |
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| Keywords: | 81 15 Lm 68 55 ag 78 66 Hf |
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