Structural characterisation of GaAlN/GaN HEMT heterostructures

(GaN/GaAlN/GaN)//Al₂O₃(00.1) HEMT heterostructures have been studied by X-ray scattering techniques, transmission electron microscopy and atomic force microscopy. X-ray reflectometry has been used to determine with a high accuracy both the individual layer thicknesses and the interfacial roughness, in spite of the weak electronic density contrast between layers. From the Fourier inversion method and using a simulation software, the roughness of the interface corresponding to the two-dimensional electron gas location has been determined equal to 0.5 nm. Both high resolution X-ray diffraction and transmission electron microscopy experiments have shown the excellent crystallinity of the heterostructures. Finally, the surface morphology has been inferred using atomic force microscopy experiments.