Electrical and optical properties of Al-doped ZnO thin films by sol-gel process |
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Authors: | Young-Sung Kim |
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Institution: | a Advanced Material Process of Information Technology, Sungkyunkwan University, Suwon 440-746, Republic of Korea b Fine Chemical Industry Support Center, Ulsan Industry Promotion Techno Park, 758-2, Yeonamdong, Buggu, Ulsan 683-804, Republic of Korea |
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Abstract: | Al-doped ZnO (AZO) thin films oriented along the (0 0 2) plane have been prepared by the sol-gel process and their electrical and optical properties with post-deposition heating temperature were investigated. The preferred c-axis orientation along the (0 0 2) plane was enhanced with increasing post-deposition heating temperature and the surface of the films showed a uniform and nano-sized microstructure. The electrical resistivity of the films decreased from 73 to 22 Ω cm as the post-deposition heating temperature increased from 500 to 650 °C; however, the film postheated at 700 °C increased greatly to 580 Ω cm. The optical transmittance of the films postheated below 650 °C was over 86%, but it decreased at 700 °C. The electrical and optical properties of the AZO films with post-deposition heating temperature are discussed. |
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Keywords: | Sol-gel Al-doped ZnO Surface process Surface structure |
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