OHMIC MOBILITY OF ELECTRONS IN SILICON

Ohmic mobility of electrons in Si has been theoretically studied as a function of temperature. In our theoietical model many-valley structure of Si conduction band, intra-valley scattering of acoustic phonons and impurities and intervalley scattering of pholons and electrons were included. The Green's function approach developed by Lei and Ting was extended to evaluate the Trictional forces resulting from several scattering mechanisms. The numerical results compared with experimental data and indicated the effect of intervalley electron-electron interaction on the mobility of electrons.