| ICP-AES测定高纯氧化钽中13种杂质元素 |
| |
| 引用本文： | 任凤莲,张颖.ICP-AES测定高纯氧化钽中13种杂质元素[J].光谱实验室,2003,20(1):74-76. |
| |
| 作者姓名： | 任凤莲 张颖 |
| |
| 作者单位： | 1. 中南大学化学化工学院,长沙市,410083
2. 株洲硬质合金厂分析测试中心,湖南省株洲市,412000 |
| |
| 摘 要： | 本文提出了基体匹配校准曲线，ICP－AES法直接测定高纯氧化钽中13种杂质元素的分析方法，并考察了光谱干扰以及基体效应的影响，确定了仪器最佳工作条件。结果表明：各元素的测定下限分别小于或等于0．0005％；相对标准偏差为1．8％－11．3％；回收率为92％－108％。
|
| 关 键 词： | 电感耦合等离子体－原子发射光谱法 高纯氧化钽 杂质元素 |
| 文章编号： | 1004-8138(2003)01-0074-03 |
| 修稿时间： | 2002年7月27日 |
Determination of 13 Trace Impurities in High-Purity Tantalum Pentoxide by ICP-AES |
| |
| REN Feng-Lian.Determination of 13 Trace Impurities in High-Purity Tantalum Pentoxide by ICP-AES[J].Chinese Journal of Spectroscopy Laboratory,2003,20(1):74-76. |
| |
| Authors: | REN Feng-Lian |
| |
| Abstract: | A method in which the matrix was matched to calibration curve has been proposed for the direct determination of 13 trace impurities in high-purity tantalum pentoxide by ICP-AES.The spectral interference and matrix effect of tantalum in ICP-AES were studied.The operation condition of the instrument was optimized.The detection limit of 13 elements is below 0.0005%,the relative standard deviation and the recovery is in the range of 1.8%-11.3% and 92%-108%,respectively. |
| |
| Keywords: | ICP-AES High-Purity Tantalum Pentoxide Impurity Element |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
