| H2S硫化CuInSe2生成CuIn(SxSe1-x)2薄膜的XRD及Raman分析 |
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| 引用本文： | 张鑫狄,江国顺.H2S硫化CuInSe2生成CuIn(SxSe1-x)2薄膜的XRD及Raman分析[J].光谱实验室,2012,29(1):9-15. |
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| 作者姓名： | 张鑫狄 江国顺 |
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| 作者单位： | 中国科学技术大学材料科学与工程系中国科学院材料与能量转换重点实验室 230026 |
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| 基金项目： | 安徽高校省级自然科学研究项目 |
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| 摘 要： | 将CuInSe2薄膜在H2S与Ar的混合气体中硫化是制备CuIn(SxSe1-x)2薄膜的一种常用方法。硫化所用到的CuInSe2薄膜是用溶剂热法生成的CuInSe2纳米颗粒旋涂而成。不同于其他真空条件下制备CuInSe2薄膜的方法.溶剂热法的优点是其相对简单的制备工艺和较低廉的成本。对硫化过程进行研究后发现,硫化温度和时间直接影响CuIn(SxSe1-x)2薄膜的质量,诸如薄膜成分、结晶度、均匀性和带隙宽度都可以通过改变这些实验条件来进行控制。
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| 关 键 词： | 铜铟硒硫 溶剂热法 部分硫化 一步硫化法 |
XRD and Raman Analysis of CuIn(SxSe1-x)2 Thin Films Prepared by H2S Vulcanizing CuInSe2 |
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| ZHANG Xin-Di
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JIANG Guo-Shun.XRD and Raman Analysis of CuIn(SxSe1-x)2 Thin Films Prepared by H2S Vulcanizing CuInSe2[J].Chinese Journal of Spectroscopy Laboratory,2012,29(1):9-15. |
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| Authors: | ZHANG Xin-Di JIANG Guo-Shun |
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| Institution: | (CAS Key Laboratory of Materials for Energy Conversion,Department of Materials Science and Engineering, University of Science and Technology of China,Hefei 230026,P.R.China) |
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| Abstract: | CuIn(SxSe1-x)2 can be prepared by the reaction of CuInSe2 with gas mixture of H2S and Ar.CuInSe2 films were prepared by coating CuInSe2 nanoparticles which were synthesized by solvothermal method.The solvothermal method was different from vacuum-based methods,and that was used due to its relatively simple procedures and low cost.The effects of temperature and time of the sulphurization on CuIn(SxSe1-x)2 film were studied.It was found that the compositions,degree of crystallinity,homogeneity and band gap of the CuIn(SxSe1-x)2 thin films were completely controlled by altering the experimental conditions. |
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| Keywords: | CuIn(SxSe1-x)2 Solvothermal Method Partly Sulphurization One-Step Sulphurization |
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