| 窄禁带光子晶体能态密度的研究 |
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| 引用本文： | 夏玉珍,高珊.窄禁带光子晶体能态密度的研究[J].光谱实验室,2010,27(3):1122-1124. |
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| 作者姓名： | 夏玉珍 高珊 |
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| 作者单位： | 1. 临沂师范学院实验中心,山东省临沂市双岭路中段(师院新校区),276005
2. 山东省交通技术学院,山东省临沂市兰山区中丘路3号,276004 |
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| 摘 要： | 利用平面波展开法研究了窄禁带光子晶体材料的能态密度分布情况,得到了窄禁带材料构成的三角晶格光子晶体能态密度随着介电常数差值的增大而增大,并且分析了氮化镓在f=0.3时,能态密度分布最小,出现最大光子带隙。研究结果为窄禁带光子晶体器件的构造提供理论依据。
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| 关 键 词： | 窄禁带光子晶体 平面波展开法 能态密度分布 |
Study on Energy State Density Distribute of Narrow Gap of Photonic Crystal |
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| XIA Yu-Zhen,GAO Shan.Study on Energy State Density Distribute of Narrow Gap of Photonic Crystal[J].Chinese Journal of Spectroscopy Laboratory,2010,27(3):1122-1124. |
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| Authors: | XIA Yu-Zhen GAO Shan |
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| Institution: | XIA Yu-Zhen GAO Shan a(Experiment and Education Technology Center,Linyi Normal University,Linyi,Shandong 276005,P.R.China)a(School of Traffic Technology of Shandong,Linyi,Shandong 276004,P.R.China) |
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| Abstract: | Energy state density distribute of photonic crystal were calculated by plane wave expansion method （PWM）.Energy state density distribute of triangular lattice photonic crystals with narrow gap are proved to increase with the dielectric constant.It was found that minimum density state was obtained when f=0.3 of GaN.This result provides theoretic basis for the narrow gap of photonic crystal devices. |
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| Keywords: | Narrow Gap of Photonic Crystal Plan Wave Expansion Method Energy State Density Distribute |
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