首页 | 本学科首页   官方微博 | 高级检索  
     检索      

Mon(n=2-13)和MonC(n=1-12)团簇的几何结构和电子结构
引用本文:杨文辉,相悦,陈轩,段海明.Mon(n=2-13)和MonC(n=1-12)团簇的几何结构和电子结构[J].原子与分子物理学报,2024,41(6):062002-65.
作者姓名:杨文辉  相悦  陈轩  段海明
作者单位:新疆大学物理科学与技术学院
基金项目:新疆维吾尔自治区自然科学基金(2022D01C419);
摘    要:结合遗传算法和CALYPSO软件,采用密度泛函理论,对Mon(n=2-13)及MonC(n=1-12)团簇基态的几何结构与电子结构展开详细研究.通过计算其基态结构的平均键长、平均结合能、二阶差分能、分裂能和前线轨道能级,对基态结构的稳定性随总原子数变化的关系展开了研究.计算结果表明,Mon团簇基态结构的稳定性可通过掺杂单个C原子而提高.综合团簇的二阶差分能、分裂能可知,n=6,9时Mon团簇的稳定性较高,n=4,7,10时MonC团簇的稳定性较高.

关 键 词:密度泛函理论  Mon团簇  MonC团簇  基态结构  电子性质
收稿时间:2023/3/2 0:00:00
修稿时间:2023/3/17 0:00:00

Geometric and electronic structures of Mon(n=2-13) and MonC(n=1-12) clusters
Yang Wen-Hui,Xiang Yue,Chen Xuan and Duan Hai-Ming.Geometric and electronic structures of Mon(n=2-13) and MonC(n=1-12) clusters[J].Journal of Atomic and Molecular Physics,2024,41(6):062002-65.
Authors:Yang Wen-Hui  Xiang Yue  Chen Xuan and Duan Hai-Ming
Institution:Xinjiang University,Xinjiang University,Xinjiang University and Xinjiang University
Abstract:Combined with the genetic algorithm and CALYPSO software, the geometrical and electronic structures of the ground states of Mon (n=2-13) and MonC (n=1-12) clusters were studied in detail by density functional theory. The average bond length, average binding energy, second-order difference energy, splitting energy and HOMO-LUMO energy gap of the ground state structure were calculated to investigate the stability of the ground state structure with respect to the total atomic number. The calculated results showed that the stability of the ground-state structures of Mon clusters could be improved by doping with individual C atoms. The second-order differential energy and splitting energy of the clusters were combined to show that the stability of Mon clusters is higher at n=6 and 9, and that of MonC clusters is higher at n=4, 7 and 10.
Keywords:Density functional theory  Mon cluster  MonC cluster  Ground state structure  Electronic property
点击此处可从《原子与分子物理学报》浏览原始摘要信息
点击此处可从《原子与分子物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号