首页 | 本学科首页   官方微博 | 高级检索  
     检索      

几个小分子静电势的密度泛函理论计算
引用本文:王东来,翟玉春.几个小分子静电势的密度泛函理论计算[J].原子与分子物理学报,2006,23(4):772-776.
作者姓名:王东来  翟玉春
作者单位:1. 东北大学材料与冶金学院,沈阳,110004;鞍山师范学院化学系,鞍山,114005
2. 东北大学材料与冶金学院,沈阳,110004
基金项目:青海省科技厅资助项目(2002-G-102)
摘    要:运用多种密度泛函理论(DFT)方法和从头算(ab initio)方法,研究了具有代表性的一系列分子的静电势,选择QCISD计算出的分子静电势为标准静电势,通过比较多种DFT法和QCISD从头算,以及它们之间的均方根偏差和静电势差值曲线图,结果表明B3LYP-DFT法与QCISD-ab initio法计算结果较吻合,暗示了B3LYP-DFT法在得到分子静电势时是一个有用的工具,尤其对于从头计算难以进行研究的大分子体系.

关 键 词:密度泛函理论  静电势  均方根偏差  静电势图
文章编号:1000-0364(2006)04-0772-05
收稿时间:2005-04-28
修稿时间:2005-04-28

Electrostatic potential of several small molecules from density functional theory
WANG Dong-lai,ZHAI Yu-chun.Electrostatic potential of several small molecules from density functional theory[J].Journal of Atomic and Molecular Physics,2006,23(4):772-776.
Authors:WANG Dong-lai  ZHAI Yu-chun
Institution:1. College of Materials and Metallurgy, Northeastern University, Shenyang 110006, P. R. China; 2. Department of Chemistry, Anahan Teachers College, Anshan 114005 ,P. R. China,P. R. China
Abstract:A number of density functional theory(DFT) methods were used to calculate the electrostatic potential for the series of molecules N_2,F_2,NH_3,H_2O,CHF_3,CHCl_3,C_6H_6, TiF_4,CO(NH_2)_2 and C_4H_5N_3O compared with QCISD(quadratic configuration interaction method including single and double substitutions) results.Comparisons were made between the DFT computed results and the QCISD ab initio ones and MP2 ab initio ones,compared with the root-mean-square deviation and electrostatic potential difference contours figures.It was found that the hybrid DFT method B3LYP,yields electrostatic potential in good agreement with the QCISD results.It is suggest this is a useful approach,especially for large molecules that are difficult to study by ab initio methods.
Keywords:Density functional theory  electrostatic potential  root-mean-square  electrostatic potential figures  
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《原子与分子物理学报》浏览原始摘要信息
点击此处可从《原子与分子物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号