多量子势垒双阻挡层结构对AlGaN 基深紫外激光二极管的性能优化

为提高AlGaN基深紫外激光二极管(Deep Ultraviolet Laser Diodes,DUV-LD)有源区内载流子浓度,减少载流子泄露,提出一种DUV-LD双阻挡层结构,相对于传统的单一电子阻挡层(Electron Blocking Layer, EBL)结构,又引入一空穴阻挡层(Hole Blocking Layer, HBL),仿真结果证明空穴阻挡层的应用能很好地减少空穴泄漏.同时又对双阻挡层改用五周期Al_0.98Ga_0.02N/Al_0.9Ga_0.1N多量子势垒层结构,结果显示与矩形EBL和HBL激光二极管相比,多量子势垒EBL和HBL激光二极管有更好的斜率效率,并且有源区内电子和空穴载流子浓度以及辐射复合速率都有效提高,其中多量子势垒EBL在阻挡电子泄露方面效果更显著.

Performance optimization of AlGaN-based deep ultraviolet laser diodes with multiquantum barrier in double blocking layers

In order to increase the carrier concentration in the active region of the AlGaN-based deep ultraviolet laser diode (DUV-LD) and reduce the problem of carrier leakage, a DUV-LD double barrier layer structure is proposed, which is compared with the traditional single electron barrier layer (EBL)Structure, and introducing a hole blocking layer (HBL). The simulation results prove that the application of the hole blocking layer can reduce hole leakage. At the same time, the five-period Al0.98Ga0.02N/Al0.9Ga0.1N multiquantum barrier structure was used for the double blocking layer. The results show that compared with the rectangular EBL and HBL laser diodes, the multiquantum barrier EBL and HBL laser diodes have better slope efficiency, and the electron and hole carrier concentration in the active region and the radiation recombination rate are effectively improved. Among them, the multiquantum barrier EBL is effective in blocking electron leakage.