图形衬底对多周期InGaAs量子点自组装生长的影响

量子点器件技术广泛应用于量子计算和光电器件上.成核位置的均匀性、有序性和尺寸一致性，可以有效提高光电器件性能.为了实现阵列量子点的可控性，本文采用湿法刻蚀制备图形化衬底，理论上解释了铟原子在图形化衬底上成核现象，产生有序的量子点分布特征，发现图形衬底的缺陷诱导在平台边缘和沟壑边缘成核，形成较大的量子点.在Stranski-Krastanow模式下图形衬底制备多周期量子点，发现多周期生长可以弱化台阶结构对量子点分布的限制作用.

Effects of Patterned Substrates on Self-Assembly of Multi-period InGaAs Quantum Dots

Quantum dot device technology is widely used in quantum computation and optoelectronic devices. The uniformity, orderliness and dimensional consistency of nucleation positions can effectively improve the performance of optoelectronic devices. In order to achieve controllability of quantum dots array, in this paper, we use the wet etching to prepare a patterned substrate, explain theoretically the nucleation phenomenon of indium atoms on the patterned substrate and hence the ordered quantum dot distribution characteristics, and thus find that defects in the patterned substrate induce nucleation at the platform edge and trench edge to form larger quantum dots. Multi-period quantum dots are prepared on the patterned substrates in Stranski-Krastanow mode, and it is found that multi-periodic growth can weaken the limiting effect of the plateau structure on the quantum dot distribution.