| PIXE应用于分析Si基片热扩Ni的深度分布 |
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| 引用本文： | 郃明松,张大忠,李建胜,陈.PIXE应用于分析Si基片热扩Ni的深度分布[J].原子与分子物理学报,1992(1). |
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| 作者姓名： | 郃明松 张大忠 李建胜 陈 |
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| 作者单位： | 四川大学原子核科学技术研究所
(郃明松，张大忠，李建胜)，四川大学原子核科学技术研究所(陈(?)) |
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| 摘 要： | 本文报告了PIXE(Proton Induce X-ray Emission)技术分析Si基片热扩Ni的深度剖面,质子能量为0.7至2.5MeV,比较了两种理论计算结果的差异,并与其它测量方法得的结果作了比较。
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| 关 键 词： | 质子诱发X射线 静电加速器 深度剖面 |
PIXE ANALYSIS OF DEPTH PROFILE OF Ni THERMALLY DIFFUSING IN Si SUBSTRATE |
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| Tai Mingsong Zhang Dazhong Li JianSheng and Chen Bo Institute of Nuclear Science and Technology of Sichuan University.PIXE ANALYSIS OF DEPTH PROFILE OF Ni THERMALLY DIFFUSING IN Si SUBSTRATE[J].Journal of Atomic and Molecular Physics,1992(1). |
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| Authors: | Tai Mingsong Zhang Dazhong Li JianSheng and Chen Bo Institute of Nuclear Science and Technology of Sichuan University |
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| Institution: | Tai Mingsong Zhang Dazhong Li JianSheng and Chen Bo Institute of Nuclear Science and Technology of Sichuan University |
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| Abstract: | In the paper it was reported that the depth profile of Ni which thermally diffused in Si substrate was analysed by PIXE technology. The energy of proton beam was from 0.7 to 2.5 MeV. The calculation results from two theories were compared with each other, and compared with measurement results by other methods |
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| Keywords: | Proton Induce X-ray Emission Van de Graaff accelerator depth profile |
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