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Solution-based growth of ZnO nanorods for light-emitting devices: hydrothermal vs. electrodeposition |
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| Authors: | A M C Ng X Y Chen F Fang Y F Hsu A B Djuri?i? C C Ling H L Tam K W Cheah P W K Fong H F Lui C Surya W K Chan |
| Institution: | 1. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P.R. China 2. Department of Physics, Hong Kong Baptist University, Waterloo Road, Kowloon Tong, Hong Kong, P.R. China 3. Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China 4. Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P.R. China |
| Abstract: | ZnO nanorods have been grown by two inexpensive, solution-based, low-temperature methods: hydrothermal growth and electrodeposition. Heterojunction n-ZnO nanorods/p-GaN light-emitting diodes have been studied for different nanorod growth methods and different preparation of the seed layer. We demonstrate that both the nanorod properties and the device performance are strongly dependent on the growth method and seed layer. All the devices exhibit light emission under both forward and reverse bias, and the emission spectra can be tuned by ZnO nanorod deposition conditions. Electrodeposition of rods or a seed layer results in yellow emission, while conventional hydrothermal growth results in violet emission. |
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