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The ac transport and giant magnetoimpedance for sol–gel La0.67Ca0.33MnO3
Authors:Qingfang Huang  Hongwei Qin  Bo Li  Jifan Hu
Institution:1. School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, China;2. Department of Functional Materials, Central Iron and Steel Research Institute, Beijing 100081, China
Abstract:In the present work, the temperature dependences of ac transport and magnetoimpedance for sol–gel La0.67Ca0.33MnO3 manganite are investigated at various frequencies. The ac resistance R with absence of field shows a peak around the metal–insulator transition temperature TMI for the dc case. A low magnetic field can shift the metal–insulator transition temperature more easily at high frequency than at low frequency. The valley phenomenon is observed in the temperature dependence of reactance X at 2 and 4 MHz, showing the effects of phase separation or grain boundaries. At 30 MHz, the peak of X appears instead of the valley, since the contribution of insulator capacitance term drops greatly and the inductance of metal dominates the X term with an increase of ac frequency in the sample. At 2 and 4 MHz, La0.67Ca0.33MnO3 sol–gel manganite under H=1 kOe shows negative ac magnetoresistance ΔR/R0, magnetoreactance ΔX/X0 and magnetoimpedance ΔZ/Z0 below 275 K, but positive ac ΔR/R0, ΔX/X0 and ΔZ/Z0 near room temperature much higher than the Curie temperature. The peak temperature of R/R0 moves to low temperature with an increase of the ac frequency from 2 to 4 MHz. At f=30 MHz, the absolute value of negative ac ΔR/R0 increases monotonically with a decrease of temperature for 175 K<T<275 K, whereas the ΔX/X0 is positive below 245 K but negative above 245 K. The ΔZ/Z0 under H=1 kOe is positive below 238 K but negative above 238 K. Such a positive ΔZ/Z0 is due to an increase of permeability induced by field. With an increase of field, the impedance Z experiences a peak, which is connected with the effect of transverse magnetic anisotropy.
Keywords:Manganite  Magnetoimpedance
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