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The Si-H IR absorption bands in NTD FZ (H2) Si and their identification
Authors:X T Meng
Institution:

Institute of Nuclear Energy Technology, Tsinghua, University Beijing 100084, PR, China

Abstract:The 1832, 2054, 1980, 2066, 1970, 1984, 2016 and 2050–2150 cm-1 Si-H infrared absorption bands in neutron transmutation doped FZ-silicon grown in a hydrogen atmosphere have been identified.
Keywords:
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