A new approach to determine accurately minority-carrier lifetime |
| |
Authors: | M Idali Oumhand Y Mir |
| |
Institution: | a Laboratoire de Physique da la Matière Condensée, Faculté des Sciences et Techniques Mohammedia, Université Hassan II Mohammedia, B.P. 146, Bd Hassan II, Mohammedia, Casablanca 20650, Morocco b Ecole Nationale des Sciences Appliquées de Safi, Université Cadi Ayyad, B.P. 63 Route Sidi Bouzid, Safi Principale, Morocco |
| |
Abstract: | Electron or proton irradiations introduce recombination centers, which tend to affect solar cell parameters by reducing the minority-carrier lifetime (MCLT). Because this MCLT plays a fundamental role in the performance degradation of solar cells, in this work we present a new approach that allows us to get accurate values of MCLT. The relationship between MCLT in p-region and n-region both before and after irradiation has been determined by the new method. The validity and accuracy of this approach are justified by the fact that the degradation parameters that fit the experimental data are the same for both short-circuit current and the open-circuit voltages. This method is applied to the p+/n-InGaP solar cell under 1 MeV electron irradiation. |
| |
Keywords: | Carrier lifetime Degradation Electron irradiation Solar cells |
本文献已被 ScienceDirect 等数据库收录! |
|