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Investigations of the spin-Hamiltonian parameters and defect structures for Gd ions in YMO4 (M=V, P, As) crystals
Authors:Wei-Qing Yang  Yuan LinWen Huang  Hui-Zhong Zeng
Institution:a Department of Optics and Electronics, Chengdu University of Information and Technology, Chengdu 610225, China
b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, China
Abstract:A 56×56 energy matrix containing the ground multiplet 8S7/2 and the excited multiplets 6L7/2 (where L=P, D, F, G, H, I) for 4f7 ion Gd3+ at a tetragonal crystal field and under an external magnetic field is constructed. By diagonalizing the energy matrix, the spin-Hamiltonian parameters (g factors g, g and zero-field splittings b20, b40, b44, b60, b64) for Gd3+ ion at the tetragonal Y3+ site of YMO4 (M=V, P, As) crystals are calculated. The calculated results are in reasonable agreement with the experimental values. The defect structures of Gd3+ centers in YMO4 crystals are estimated from the calculation. The results are discussed.
Keywords:Spin-Hamiltonian parameters  Crystal- and ligand-field theory  Defect structures  Gd3+  YMO4 (M=V  P  As)
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