|
|||||
|
|
The interaction between misfit dislocations at the metal/MgO interfaces: Atomistic study and analysis |
|
| Authors: | Y Long NX Chen |
| Institution: | a Laboratory of Computational Physics, Institute of Applied Physics and Computational Mathematics, P.O. Box 8009, Beijing 100088, China b Department of Physics, Tsinghua University, Beijing 100084, China c Institute for Applied Physics, University of Science and Technology, Beijing 100083, China |
| Abstract: | Misfit dislocation is one of the most important linear defects at the interface. Its structure and mechanics have attracted much attention. However, the dislocation dynamics for some interfaces are not very clear. We study the dislocation-dislocation interaction at the metal/MgO interfaces. The interaction is proved to be repulsive, and is obtained by molecular mechanics. The dislocation mass and dislocation wave are investigated, for which the dislocation wave speed is calculated by using the dislocation network model. A set of interesting results is obtained. |
| Keywords: | Metal/MgO interface Dislocation-dislocation interaction Dislocation mass Dislocation wave |
| 本文献已被 ScienceDirect 等数据库收录！ | |