The annealing effect on structural,optical and photoelectrical properties of CuInS2/In2S3 films |
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| Authors: | Mutlu Kundakçı |
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| Institution: | 1. Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran;2. Department of Physical Chemistry, Faculty of Chemistry, University of Kashan, Kashan, Iran;1. School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031, PR China;2. School of Electromechanical Engineering, Nanchang University, Nanchang, Jiangxi 330031, PR China;1. University of Minho, Dept. Industrial Electronics, Campus Azurem, 4800-058 Guimaraes, Portugal;2. University of São Paulo (USP), Dept Electrical Engineering (SEL), Avenida Trabalhador São-Carlense, 400, Pq. Ind. Arnold Schimidt, São Carlos-SP CEP 13566-590, Brazil;1. Unidad de Estudios Universitarios, Colegio Mayor de Nuestra Señora del Rosario, Cra. 24 N° 63C-69, Bogotá, Colombia;2. Université de Lorraine, Institut Jean Lamour, Nancy, France;3. Departamento de Quimica, Universidad Nacional de Colombia, Cra. 30 N° 45-03, Bogotá, Colombia;4. Departamento de Física, Universidad de los Andes, Calle 21 No. 1-20, Bogotá, Colombia;1. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden;2. IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 440-746, South Korea;3. Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746, South Korea;4. College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China;5. IFW Dresden, Institute for Complex Materials, P.O. Box D-01171, Dresden, Germany;6. Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland |
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| Abstract: | Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS2/In2S3 multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 °C for 30 min in nitrogen atmosphere and the annealing effect on structural, optical and photoelectrical properties of the film was investigated. X-ray diffraction (XRD) and optical absorption spectroscopy were used for structural and optical studies. Current–Voltage (I–V) measurements were performed in dark environment and under 15, 30 and 50 mW/cm2 light intensity to investigate the photosensitivity of the structure. Also, the electrical resistivity of the film was determined in the temperature range of 300–470 K. It was found that annealing temperature drastically affects the structural, optical and photoelectrical properties of the CuInS2/In2S3 films. |
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