Effect of alpha-particle irradiation on the electrical properties of n-type Ge |
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Authors: | KT Roro PJ Janse van Rensburg FD Auret S Coelho |
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Institution: | Department of Physics, University of Pretoria, Pretoria 0002, South Africa |
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Abstract: | Deep-level transient spectroscopy was used to investigate the effect of alpha particle irradiation on the electrical properties of n-type Ge. The samples were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radionuclide source. The main defects introduced were found to be electron traps with energy levels at EC−0.38, EC−0.21, EC−0.20, EC−0.15, and EC−0.10 eV, respectively. The main defects in alpha particle irradiation are similar to those introduced by MeV electron irradiation, where the main defect is the E-center. A quadratic increase in concentration as a function of dose is observed. |
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