An Infrared Sensitive Negative-Differential-Resistance Device for High-Temperature Application |
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| Authors: | Yanfeng Jiang Siyuan Li Su Liu and Zhonghua Ma |
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| Institution: | (1) Institute of Static Induction Devices, Physics Department, Lanzhou University, Lanzhou, 730001, People's Republic of China |
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| Abstract: | In this paper, a novel infrared sensitive negative-differential-resistance (NDR) device has been achieved. This device can be operated at 100°C, indicating its excellent characteristic. Under daylight, the device exhibits a negative-differential-resistance property and the peak-to-valley current ratio (PVCR) is still prominent at 100°C. When the device's forward bias is fixed, device's current changes with infrared light power. So, it is sensitive to infrared light. Its operational mechanism is interpreted in detail, too. |
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| Keywords: | infrared ferroelectric material negative-differential-resistance |
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