Far infrared and millimeter wave studies of impurity scattering within electron-hole liquid in semiconductors

Despite the experimental evidence in far-infrared that impurities are ionized within the electron-hole liquid in silicon and germanium, combination of luminescence data with millimeter wave cyclotron resonance and far-infrared magneto-optics tells us that the impurity-assisted intervalley electron scattering within EHL in silicon can apparently be interpreted on the basis of neutral impurity scattering. Justification of simulating the impurity center within EHL as neutral is grounded for the electron scattering problem, making use of the atomic scattering theory in contrast with a simple ionized impurity model calculation with proper screening.