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Engineering near-surface electron states in three-dimensional topological insulators |
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| Authors: | V N Men’shov V V Tugushev E V Chulkov |
| Institution: | 1. National Research Centre Kurchatov Institute, Moscow, 123182, Russia 2. Tomsk State University, Tomsk, 634050, Russia 3. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, Russia 4. Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC, Centro Mixto CSIC-UPV/EHU, 20080, San Sebastian, Basque Country, Spain |
| Abstract: | Using the continual model of a semi-infinite three dimensional (3D) topological insulator (TI) we study the effect of the surface potential (SP) on the formation of helical topological states near the surface. The results reveal that spatial profile and spectrum of these states strongly depend on the SP type and strength. We pay special attention to the 3D TI substrate/non-magnetic insulating overlayer system to illustrate the principles of the topological near-surface states engineering. |
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