Luminescent properties of semiconductor composite systems composed of erbium triphthalocyanine molecules and a silicon slot structure in the near-infrared region |
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| Authors: | I A Belogorokhov D A Mamichev V E Pushkarev L G Tomilova and D P Khokhlov |
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| Institution: | 1.Federal State Research and Design Institute of Rare Metal Industry,Moscow,Russia;2.Russian Research Centre Kurchatov Institute,Moscow,Russia;3.Faculty of Physics,Moscow State University,Moscow,Russia;4.Faculty of Chemistry,Moscow State University,Moscow,Russia |
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| Abstract: | Photoluminescence spectra of organic semiconductors based on mono-, bis-, and triphthalocyanine containing erbium as a complexing
agent have been obtained in the range of 1–1.8 μm. Comparison of the spectral characteristics has shown that erbium triphthalocyanine
has the highest photoluminescence quantum yield at a wavelength of 1.5 μm. To enhance this effect, composite materials based
on erbium triphthalocyanine and a silicon slot structure have been synthesized, in which an additional increase in the photoluminescence
signal near 1.14 μm has been observed. At the same time, no photoluminescence signal has been observed near the wavelength
of 1.5 μm. This can be explained by taking into account the interaction of the erbium triphthalocyanine molecules with the
adsorption centers of the silicon matrix. |
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