Manifestation of magnetically induced spatial dispersion in the cubic semiconductors ZnTe, CdTe, and GaAs |
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| Authors: | B B Krichevtsov R V Pisarev A A Rzhevskii H -J Weber |
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| Institution: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) Department of Physics, Dortmund University, 44221 Dortmund, Germany |
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| Abstract: | Nonreciprocal birefringence due to magnetically induced spatial dispersion was observed in the T
d-class cubic semiconductors ZnTe, CdTe, and GaAs near the fundamental absorption edge. The dispersion of the parameters A and g, describing the contributions from terms of the type B
ikj to the diagonal and off-diagonal components of the permittivity tensor ε
ij(ω,B,k), is determined for ZnTe and CdTe. Analysis of the dispersion and anisotropy of the nonreciprocal birefringence shows that
in ZnTe, CdTe, and GaAs, in contrast to magnetic semiconductors of the type Cd1−x
MnxTe, it is due excitonic mechanisms.
Pis’ma Zh. éksp. Teor. Fiz. 69, No. 7, 514–519 (10 April 1999) |
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