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Induction of Room Temperature Ferromagnetism in N-Doped Yttrium Oxide: Ab Initio Calculation
Authors:Xu  Y E  Chu  J H
Institution:1.Department of Electronic Engineering, Shanghai Jian Qiao University, 201306, Shanghai, China
;2.Department of Opto-Electronic Technology, Shanghai University, 2004444, Shanghai, China
;
Abstract:JETP Letters - To explore the diluted magnetic semiconductors for spintronic applications, we have studied N doped Y2O3 employing density functional theory (DFT). It has been observed that the...
Keywords:
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