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Fine structure of the exciton states in InAs quantum dots |
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| Authors: | A V Gaisler A S Yaroshevich I A Derebezov A K Kalagin A K Bakarov A I Toropov D V Shcheglov V A Gaisler A V Latyshev A L Aseev |
| Institution: | 1185. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia 3185. Novosibirsk State University, Novosibirsk, 630090, Russia 2185. Novosibirsk State Technical University, Novosibirsk, 630092, Russia |
| Abstract: | The fine structure of the exciton states in InAs quantum dots grown by the Stranski-Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has been demonstrated that, with increasing quantum-dot size, the splitting of the exciton states increases steadily to ～102 μeV. It has been shown that, in the exciton energy range of 1.3–1.4 eV, the magnitude of this splitting is comparable to the natural width of the exciton lines. This result is important for the development of entangled photon pair emitters based on InAs quantum dots. |
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