Temperature sensitivity and noise of an HTSC Josephson detector on a sapphire bicrystal substrate at 77 K

In YBa₂Cu₃O_{7 ? x} films grown on sapphire bicrystal substrates, the Josephson junctions are prepared based on artificial grain boundaries formed by the turn of the crystal lattices about the 100] axis. The films are deposited by the laser ablation method on the buffer CeO₂ layer. The critical film temperature reaches 88.5 K with a transition width of 1.5 K. Junctions from 2 to 3-μ m wide are integrated into the planar log-periodic antennas and their characteristics are measured at 77 K. The characteristic voltage I _c R _n reaches 570 μV. With exposure to external radiation at a frequency of 113 GHz, the Shapiro steps were observed on the current-voltage characteristic. The temperature sensitivity of this detector placed in a quasi-optical receiving unit is measured. At the modulation of the input radiation temperature 77 K/300 K, a response of more than 200 nV is observed at the detector output. At the modulation frequency, intrinsic noise is about 1 nV/Hz^1/2, which corresponds to a temperature resolution of 1 K.