电子敏感CMOS部件除气方法北大核心CSCD

电子轰击有源像素传感器(electron bombarded active pixel sensor,EBAPS)作为真空-固体混合型微光器件,其性能和工作寿命一定程度上取决于器件内部真空度保持情况。分析造成EBAPS器件真空度下降的原因,推断出真空度恶化的严重后果,提出提高和保持EBAPS器件内部真空度的手段,通过搭建超高真空除气系统对EBAPS器件中核心部件电子敏感CMOS部件的放气特性进行了研究,并根据研究结果得到最佳的除气工艺参数,为EBAPS数字化微光器件的制备提供了技术基础。

Degassing method of electronic sensitive CMOS components

Electron bombarded active pixel sensor (EBAPS) is a hybrid vacuum-solid low-level-light device. Its performance and service life depend on the vacuum maintenance of the device to a certain extent. The reasons for the decline of vacuum degree of EBAPS devices were analyzed, the serious consequences of the deterioration of vacuum degree were deduced, and the means to improve and maintain the internal vacuum degree of EBAPS devices were put forward. By constructing an ultra-high vacuum degassing system, the degassing characteristics of the core components of EBAPS electronic sensitive complementary metal-oxide-semiconductor (CMOS) components were studied. According to the research results, the optimal degassing process parameters were obtained, which provided a technical basis for the preparation of EBAPS digital low-level-light devices.