| 基于AlN膜钝化层VCSEL激光器热特性的研究 |
| |
| 引用本文： | 马祥柱,霍晋,曲轶,杜石磊.基于AlN膜钝化层VCSEL激光器热特性的研究[J].应用光学,2010,31(6):1023-1026. |
| |
| 作者姓名： | 马祥柱 霍晋 曲轶 杜石磊 |
| |
| 作者单位： | 长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 |
| |
| 摘 要： | 用ANSYS有限元热分析软件模拟了基于AlN膜钝化层和SiO2膜钝化层的高功率垂直腔面发射半导体激光器(VCSEL)器件内部的热场分布和热矢量分布。经模拟得到基于AlN膜钝化层的VCSEL热阻为3.123℃/W，而基于SiO2膜钝化层的VCSEL的热阻为4.377℃/W。经实验测得基于AlN膜钝化层的VCSEL热阻为3.54℃/W，而基于SiO2膜钝化层的VCSEL的热阻为4.75℃/W，模拟结果与实验结果吻合较好。
|
| 关 键 词： | 垂直腔面发射半导体激光器 AlN膜 SiO2膜 ANSYS |
Thermal characteristic analysis of AlN film passivation layer of VCSEL |
| |
| MA Xiang-zhu,HUO Jin,QU Yi,DU Shi-lei.Thermal characteristic analysis of AlN film passivation layer of VCSEL[J].Journal of Applied Optics,2010,31(6):1023-1026. |
| |
| Authors: | MA Xiang-zhu HUO Jin QU Yi DU Shi-lei |
| |
| Institution: | Changchun University of Science and Technology, Changchun 130022, China |
| |
| Abstract: | Based on ANSYS finite-element software, internal distribution of thermal fields and heat flow vector distribution of high power VCSE in AlN film passivation layer and SiO2 film passivation layer were analyzed. According to modeling, the Rthjc of VCSEL in AlN film is 3.123℃/W and the Rthjc of VCSEL in SiO2 film is 4.377℃/W. Experiment indicates that the Rthjc of VCSEL in AlN film is 3.54℃/W and the Rthjc of VCSEL in SiO2 film is 4.75℃/W. |
| |
| Keywords: | vertical-cavity surface-emitting semiconductor lasers (VCSEL) AlN film SiO2 film ANSYS |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《应用光学》浏览原始摘要信息 |
| 点击此处可从《应用光学》下载免费的PDF全文 |
