| 透明导电半导体ZnO膜的研究 |
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| 引用本文： | 蒋向东,张怀武,黄祥成.透明导电半导体ZnO膜的研究[J].应用光学,2002,23(2):35-38. |
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| 作者姓名： | 蒋向东 张怀武 黄祥成 |
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| 作者单位： | 1. 电子科技大学信息材料工程学院,成都,610054
2. 西安应用光学研究所,西安,710065 |
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| 摘 要： | 本文采用独特的电子束蒸镀方法，在光学镀膜机上，以 ＺｎＯ＋３％Ａｌ２Ｏ３和 ＺｎＯ为膜料．ｋ９光学玻璃为衬底，制备出ＺｎＯ 膜。膜层为多晶膜，可见光透过率为Ｔ＝７０－９０％，电阻率ｐ＝１×１０－５Ω·ｍ，方电阻为 Ｒ ＝１５０±５０±５０Ω／ ，膜机械强度超过国标单层标准，找到实用最佳工艺条件。
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| 关 键 词： | ZnO膜 透明导电性 电子束蒸镀方法 透明导电氧化物半导体薄膜 氧化锌薄膜 |
| 文章编号： | 1000-2082(2002)02-0035-04 |
| 收稿时间： | 2001/9/10 |
THE RESEARCH ON THE TRANSPARENT AND CONDUCTIVE SEMI CONDUCTOR ZNO THIN FILM |
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| JIANG Xiang-dong,ZHANC Huai-wu,HUANG Xiang-cheng.THE RESEARCH ON THE TRANSPARENT AND CONDUCTIVE SEMI CONDUCTOR ZNO THIN FILM[J].Journal of Applied Optics,2002,23(2):35-38. |
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| Authors: | JIANG Xiang-dong ZHANC Huai-wu HUANG Xiang-cheng |
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| Institution: | JIANG Xiang-dong1,ZHANC Huai-wu1,HUANG Xiang-cheng2 |
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| Abstract: | This paper described that the ZnO film have been prepared by electron gun evaporation. As the film material, ZnO + 3% Al203 was doped into ZnO film. Under differe,it process condition, polycrystal structure of the ZnO films were obtained. Transmittance(visible range)T = 70 -90%, resistivity p =1x 10-5Ω/ , square resistance R =150±50Ω/ . The mechanical strength of sample films were super than the national single film standard. The best process condition has found. |
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| Keywords: | thin film ZnO semi -conductor transparent and conductive |
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