掺杂透明导电半导体薄膜的光电性能研究

掺杂氧化锌透明导电膜(AZO)是一种重要的光电子信息材料，其制备方法有真空蒸镀法、磁控溅射法，化学气相沉积和脉冲激光沉积法等。该文采用溶胶 凝胶（sol gel)工艺在普通玻璃基片上成功地制备出Al3+掺杂型ZnO透明导电薄膜。将这种薄膜在空气和真空中以不同的温度进行了退火处理，并对薄膜进行了XRD分析和光电性能研究。结果表明，所制备的薄膜为钎锌矿型结构，在c轴方向择优生长，真空退火有利于薄膜结晶状况的改善，并使薄膜的载流子浓度大幅度地增加而电阻率下降，并且真空退火对薄膜的透射率影响不大。

Electrical and optical properties of transparent and conductive Al-doped ZnO thin film

In this paper,Al∶ZnO film was prepared on glass substrate with sol-gel method successfully. The films was annealed at temperatures of 100℃～400℃ in two different conditions,atmosphere and vacuum. The microstructures,electrical and optical properties were analyzed with X-ray diffraction (XRD) spectroscopy. The result shows that it has a polycrystalline hexagonal wurtzite structure with highly preferred orientation along the (002) plane. The annealing treatment in vacuum is of benefit to the improvement of the crystalline condition of the thin film,the steep increase of the free carrier concentration and the decrease of the resistivity,and it has no obvious effect on the film transmittance.