| 高功率窄脉宽半导体激光激励器设计 |
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| 引用本文： | 阎得科,孙传东,冯莉,何浩东,朱少岚.高功率窄脉宽半导体激光激励器设计[J].应用光学,2011,32(1). |
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| 作者姓名： | 阎得科 孙传东 冯莉 何浩东 朱少岚 |
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| 作者单位： | 1. 中国科学院,西安光学精密机械研究所,瞬态光学与光子技术国家重点实验室,陕西,西安,710119;中国科学院,研究生院,北京,100039
2. 中国科学院,西安光学精密机械研究所,瞬态光学与光子技术国家重点实验室,陕西,西安,710119 |
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| 摘 要： | 为了获得高功率窄脉宽半导体激光,设计了半导体激光器相应的激励单元,论述MOSFET作为高速开关的工作机理,分析基于MOSFET作为高速开关产生窄的大电流脉冲的电路模型.为了使MOSFET开关速度尽可能快,根据前述分析,提出推挽式MOSFET栅极驱动方式并设计了触发窄脉冲的发生电路.当激光二极管接入放电回路时,实验表明:激光二极管输出光的峰值功率可达67.5 W,脉宽约为20 ns.最后,简要分析了影响光脉冲宽度的因素.
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| 关 键 词： | 能量压缩技术 MOSFET高速开关 推挽式驱动 窄脉冲 高功率激光 |
Design of driving system for high power and narrow pulse-width semiconductor laser |
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| YAN De-ke,SUN Chuan-dong,FENG Li,HE Hao-dong,ZHU Shao-lan.Design of driving system for high power and narrow pulse-width semiconductor laser[J].Journal of Applied Optics,2011,32(1). |
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| Authors: | YAN De-ke SUN Chuan-dong FENG Li HE Hao-dong ZHU Shao-lan |
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| Institution: | YAN De-ke1,2,SUN Chuan-dong1,FENG Li1,HE Hao-dong1,ZHU Shao-lan1(1.State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi'an,710119,China,2.Graduate School of Chinese Academy of Sciences,Beijing 100039,China) |
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| Abstract: | In order to achieve high peak power and narrow pulse-width semiconductor laser,a driving system for the laser was designed.The electrical circuit for producing narrow-high current pulses based on MOSFET as a fast switch for the discharge circuit was analyzed.The working procedure of the MOSFET as a fast switch was discussed.In order to make the MOSFET switch as fast as possible,the push-pull driving circuit was brought forward and the circuit of narrow trigger pulses was designed.When the LD was connected t... |
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| Keywords: | power compression technology fast MOSFET switch push-pull driving narrow pulse high power laser |
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