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A facile method for flexible GaN‐based light‐emitting diodes
Authors:Younghun Jung  Xiaotie Wang  Sung Hyun Kim  Fan Ren  Jihyun Kim  Stephen J Pearton
Institution:1. Department of Chemical and Biological Engineering, Korea University, Anam‐dong 5‐1, Sungbuk‐gu, Seoul 136‐701, Korea;2. Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA;3. Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
Abstract:Flexible GaN‐based light‐emitting diodes (LEDs) on polyethylene terephthalate (PET) substrates are demonstrated. The process uses commercial LEDs on patterned sapphire substrates, laser lift‐off (LLO), wet etching for additional surface roughening, and mounting of the freestanding LED on a PET substrate. Electrical and optical properties from the free‐standing LLO‐LEDs mounted on the flexible PET substrates were characterized. The process is scalable to large wafer diameters. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords:light‐emitting diodes  laser lift‐off  flexible electronics
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