Buried emitter solar cell structures: Decoupling of metallisation geometry and carrier collection geometry of back contacted solar cells

We present a novel solar cell structure, the “buried emitter solar cell”. This concept is designed for decoupling the metallisation geometry from the geometry of the carrier collecting p–n junction in back‐contacted (and in particular back‐junction) solar cells without requiring electrical insulation by dielectric layers. The most prominent features of this device structure are a carrier collecting emitter that covers close to 100% of the total cell area and an effective electrical insulation between emitter and base metallisation via a p⁺–n⁺ junction. The experimental results presented in this paper report a 19.5% efficient “buried emitter solar cell”, where 50% of the solar cell's rear side exhibit a p⁺–n⁺ junction. This preparation technique implies covering a boron‐doped p‐type emitter with an n‐type surface layer that can be efficiently surface‐passivated by thermal oxidation. All structuring of this cell has been performed by laser processing without any photo‐lithography. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)