Department of Materials Science and Engineering, National Chiao Tung University, 300 Hsinchu, Taiwan
Abstract:
Semipolar (11\bar 2 \bar 2) ZnO was successfully grown on (112) LaAlO3/(LaAlO3)0.29(Sr2AlTaO6)0.35 substrate by pulsed laser deposition. The epitaxial relationship is 11\bar 23]_{\rm ZnO} // 11\bar 1]_{\rm LAO/LSAT} with the polar axis of 000\bar 1]_{\rm ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ～1 × 109 cm–2, and the density of basal stacking faults is below 1 × 104 cm–1. The (11\bar 2 \bar 2) ZnO exhibits strong D0X emissions with a FWHM of 9 meV and very few green–yellow emissions in the low‐temperature (10 K) and room‐temperature photoluminescence spectra, respectively.
