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Effect of III‐nitride polarization on VOC in p–i–n and MQW solar cells |
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| Authors: | Gon Namkoong Patrick Boland Si‐Young Bae Jae‐Phil Shim Dong‐Seon Lee Seong‐Ran Jeon Kurniawan Foe Kevin Latimer W Alan Doolittle |
| Institution: | 1. Department of Electrical and Computer Engineering, Old Dominion University, Applied Research Center, 12050 Jefferson Avenue, Newport News, VA 23606, USA;2. School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheomdan‐gwagiro (Oryong‐dong), Buk‐gu, Gwangju 500‐712, Korea;3. School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheomdan‐gwagiro (Oryong‐dong), Buk‐gu, Gwangju 500‐712, KoreaPhone: +82 62 715 2248, Fax: +82 62 715 2204;4. Korea Photonics Technology Institute, 971‐35, Wolchul‐dong, Buk‐gu, Gwangju, 500‐779, Korea;5. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA |
| Abstract: | We performed detailed studies of the effect of polarization on III‐nitride solar cells. Spontaneous and piezoelectric polarizations were assessed to determine their impacts upon the open circuit voltages (VOC) in p–i(InGaN)–n and multi‐quantum well (MQW) solar cells. We found that the spontaneous polarization in Ga‐polar p–i–n solar cells strongly modifies energy band structures and corresponding electric fields in a way that degrades VOC compared to non‐polar p–i–n structures. In contrast, we found that piezoelectric polarization in Ga‐polar MQW structures does not have a large influence on VOC compared to non‐polar MQW structures. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Keywords: | InGaN solar cells polarization piezoelectric polarization p− i− n structures multi‐quantum well structures |