Improved electromigration failure in Al based interconnects |
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| Authors: | Yong Tae Kim Seong‐Il Kim |
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| Institution: | 1. Semiconductor Materials and Devices Laboratory, Korea Institute of Science & Technology, P.O. Box 131, Cheongryang, Seoul 130‐650, Korea;2. Semiconductor Materials and Devices Laboratory, Korea Institute of Science & Technology, P.O. Box 131, Cheongryang, Seoul 130‐650, KoreaPhone: +82 2 958 5737, Fax: +82 2 958 5739 |
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| Abstract: | Electromigration (EM) failure in Al interconnects is significantly improved by inserting a WN film between Al and the interlayer dielectric: over 90% of test samples failed with the Al/TiN/Ti interconnects, whereas the failure rate of the Al film on WN is reduced to less than 13% under the stress con‐ ditions of 9 MA/cm2 and 225 °C, and the EM lifetime is also much extended at the same conditions. Experimental results suggest that higher activation energy, no hillocks and compressive stress are responsible for the improved electromigration performance in the Al/WN interconnect. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 66 30 Qa 73 40 Ns 81 15 Gh 85 40 Ls 85 40 Qx |
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