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Investigation of electronic properties of alloyed double metal ring
Institution:1. Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran;2. School of Physics, Iran University of Science and Technology, Tehran 16846, Iran;3. Department of physics, Imam Khomeini International University, Qazvin, 34148-96818, Iran;1. School of Information Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China;2. Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Republic of Singapore;3. School of Physics Science and Engineering, Tongji University, Shanghai 200092, China;1. Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang, 050043, People''s Republic of China;2. Physics Department and Hebei Advanced Thin Film Laboratory, Hebei Normal University, Shijiazhuang, 050024, People''s Republic of China;3. Physics Department, Shijiazhuang University, Shijiazhuang, 050035, People''s Republic of China;1. Condensed Matter Physics Division, Saha Institute of Nuclear Physics, Sector-I, Block-AF, Bidhannagar, Kolkata-700 064, India;2. Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barackpore Trunk Road, Kolkata-700 108, India
Abstract:The present work is a theoretical study of the electronic properties of alloyed double metal ring (ADMR) threaded by magnetic flux. The studied system is consisting of two rings connected parallel, with two different types of atomic sites. This work contains two parts. First is an analytical study of calculation of the energy spectrum, persistent current, Drude weight and low-field magnetic susceptibility of ADMR by the tight-binding method. Second is a computation study of electronic properties of the alloyed double metal ring by density functional theory (DFT). The latter part is considered as a complementary study of what was studied in the first part in order to determine the best materials which will be used to design alloyed double metal ring. Our results show that the on-site energies for both types of atoms, inter-ring coupling strength and hopping strengths play an interesting role in controlling the electronic properties.
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