Microstructures and characteristics of Ti/Al interface with segregated Si element |
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| Institution: | 1. College of Engineering, Yantai Nanshan University, Yantai 265713, China;2. Materials School, Central South University, Changsha 410083, China;3. Key Lab of Nonferrous Materials of Ministry of Education, Central South University, Changsha 410083, China;1. Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt;2. Physics Department, Faculty of Science, Suez University, El–Suez, Egypt |
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| Abstract: | We present a systematic first principles study for evaluating the potential impact of Si on adhesion of α-Ti (0 0 2)/Al (1 1 1) interface at the atomic level. The results show that Si atom tends to segregate to the interface by following the replacement rather than the interstitial path. The favorite replacement site is observed in Ti layer. Segregated Si contributes to form the covalent bonding between Si and other Al and Ti atoms, and enhances the strength of the whole interface area. This is in accordance with the experimental outcomes. |
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