Design and simulation of charge transport in single-electron transistor using TCAD numerical simulator |
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| Institution: | 1. Department of Electronics and Communication Engineering, Chandigarh engineering college, Landran, Mohali, Punjab-140307, India;2. Department of Computer Science Engineering, Chandigarh University, Gharuan, Mohali, Punjab- 140413, India;1. School of Mathematical Sciences, Fudan University, Shanghai 200433, P. R. China;2. Department of Mathematics and Information Technology, The Education University of Hong Kong, 10 Lo Ping Road, Tai Po, New Territories, Hong Kong;1. Department of Mechanical Engineering, Chandigarh Engineering College, Landran (Mohali), Punjab, India;2. Department of Mechanical Engineering, Punjabi University, Patiala, Punjab, India;3. Department of Mechanical Engineering, Baba Banda Singh Bahadur Engineering College, Fatehgarh, Sahib, Punjab, India |
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| Abstract: | The ability to control the electron flow of a MOSFET is decreased due to the quantum mechanical effect when scaled down below 50 nm. Hence, A new field of device research is needed to complete this challenge. A device based on Tunneling phenomena is called a single-electron device. In this paper, the most fundamental single-electron device is a single-electron transistor (SET) designed using visual TCAD with a gate length and width of 2 nm. The channel is ultra-thin with a length of 2 nm and a width of 0.005 nm, and the channel thickness is 0.3 nm. Then a Si quantum dot of size 0.5 × 1.nm2 is used between the island and the gate. Both the Devices are simulated using the Genius Simulator. And it is found that at room temperature, the device with Si dot is more efficient. The device with Si dot has less capacitance and higher charging efficiency than the device without the Quantum dot. |
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