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Endor of a dislocation center in a deformed silicon |
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| Authors: | VA Grazhulis VV Kveder YuA Osip&#x;yan YH Lee RL Kleinhenz H Van Camp CP Scholes JW Corbett |
| Institution: | Institute of Solid State Physics of the Academy of Sciences of the USSR, Chernogolovka, Moscow District, USSR;Institute for the Study of Defects in Solids, SUNY/Albany, Albany, New York 12222, USA |
| Abstract: | We present the first ENDOR measurements on dislocations in silicon, which measurements directly show the extended nature of the electron wave function on the dislocation. |
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