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Dielectric properties in strained SrTiO3 thin film
Authors:H Wu  R Zhang
Institution:a Department of Applied Physics, Donghua University, Ren Min Road 2999, Songjiang District, 201620 Shanghai, PR China
b Department of Physics, Shanghai Maritime University, 1550 Pudong Avenue, 200135 Shanghai, PR China
Abstract:We investigate the dielectric properties in strained SrTiO3 thin films by employing the transverse-field Ising model, combining with the thermodynamic analysis to modify the strain dependent parameters. Ferroelectricity in STO thin films appears when the strain rises above a critical value, due to the decreasing influence of quantum fluctuations.
Keywords:Dielectric susceptibility  Misfit strain  Tunability  Transition temperature
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