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Interface effect between blue phosphorus and metals
Institution:1. The State Key Laboratory for Refractories and Metallurgy, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China;2. Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Hong Kong, China;3. School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen, China;4. Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract:The contacted properties of metal substrates with single layer (monolayer) blue phosphorus are calculated by first principles. We analyze the charge transfer, atomic orbital overlap, electronic properties and potential barrier at the interface of metal contacted blue phosphorene (BuleP) to understand how to effectively inject electrons from the metal into the contacted blue phosphorus. We inquire into interfacial effect of blue phosphorene directly in contact with five representative metallic substrates – Au (111), Ag(111), Al(111), Co(111) and Sc(0001), which are having minimal lattice mismatch with the BlueP. We find that the contact properties of these five metals are ohmic contact and schottky contact. Of the five different contact metals, Co-BlueP heterojunction has the best electrical conductivity. The lower SBH in the Al contact can also lead to a good substrate for a Schottky contact for the heterojunction. These results can provide guidance for the future design of BlueP-based electronic devices and for the exploration of new low-dimensional semiconductor transport processes.
Keywords:First principles  Blue phosphorene  Schottky contact  Electronics  Heterojunction
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