Bipolar resistive switching of solution processed TiO2–graphene oxide nanocomposite for nonvolatile memory applications

In this study, we report the observation of memory effect in TiO₂–GO nanocomposite films. Electrical properties of the prepared Al/TiO₂–GO composite/ITO devices have shown stable and reproducible bipolar resistive switching behavior. The TiO₂–GO composite films were prepared using solution method by spin coating technique. Observed results have shown that the inclusion of GO in the TiO₂ matrix have exhibited a significant role in the resistive switching mechanism. The device has exhibited an excellent memory characteristic with low operating voltages, good endurance up to 10⁵ cycles and long retention time more than 5×10³ s$5\times {10}^3\text{s}$.