Band-gap modulation of graphane-like SiC nanoribbons under uniaxial elastic strain |
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| Institution: | 1. Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China;2. Department of Physics, Xuzhou Normal University, Xuzhou 221009, China;3. MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China;4. Department of Physics, Yancheng Institute of Technology, Yancheng 224051, China;5. Department of Physics, Nanjing University, Nanjing 210093, China;6. Beijing Computational Science Research Center, 3 Heqing Road, Beijing 100084, China |
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| Abstract: | The band-gap modulation of zigzag and armchair graphane-like SiC nanoribbons (GSiCNs) under uniaxial elastic strain is investigated using the density functional theory. The results show that band gap of both structures all decreases when being compressed or tensed. In compression, both zigzag and armchair GSiCNs are semiconductors with a direct band gap. However, in tension, the armchair GSiCNs undergo a direct-to-indirect band-gap transition but the zigzag GSiCNs still have a direct band gap. These results are also proved by HSE06 method. This implies a potential application of the graphane-like SiC nanoribbons in the future pressure sensor and optical electronics nanodevices. |
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| Keywords: | Graphane-like SiC nanoribbon Direct band gap Band-gap transition Compression Tension |
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