Visualization of nanosecond laser-induced dewetting,ablation and crystallization processes in thin silicon films |
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Authors: | Dongfeng Qi Zifeng Zhang Xiaohan Yu Yawen Zhang |
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Institution: | 1. Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang, 315211, China;2. College of Mechanical and Electronic Engineering, Chaohu University, Hefei 230000, Anhui, China |
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Abstract: | In the present work, nanosecond pulsed laser crystallization, dewetting and ablation of thin amorphous silicon films are investigated by time-resolved imaging. Laser pulses of 532 nm wavelength and 7 ns temporal width are irradiated on silicon film. Below the dewetting threshold, crystallization process happens after 400 ns laser irradiation in the spot central region. With the increasing of laser fluence, it is observed that the dewetting process does not conclude until 300 ns after the laser irradiation, forming droplet-like particles in the spot central region. At higher laser intensities, ablative material removal occurs in the spot center. Cylindrical rims are formed in the peripheral dewetting zone due to solidification of transported matter at about 500 ns following the laser pulse exposure. |
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Keywords: | Time-resolved image Laser-induced directed dewetting Pulse laser irradiation |
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