Positron annihilation studies in alpha-irradiated n-type GaAs |
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| Authors: | A Sen Gupta SV Naidu RK Bhandari P Sen |
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| Institution: | 1. Saha Institute of Nuclear Physics, Calcutta 700 009, India;2. Variable Energy Cyclotron Centre, BARC, Block AF, Salt Lake City, Calcutta 700 064, India |
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| Abstract: | The positron annihilation technique has been used to study the recovery of defects in α-irradiated n-type GaAs. The Doppler broadening lineshape parameter, S, showed, for the first time, the recovery in three steps beginning around 120°C, 300°C and 510°C indicating the presence of three types of defects. |
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