Optimal conditions for controllable one-dimensional nanomold by selective etching of multilayer film |
| |
| Institution: | 1. Physics Department of Nanjing University, Nanjing, 210093, People’s Republic of China;2. Institute of Solid State Physics of JiLin Normal University, SiPing, Jilin, 136000, People’s Republic of China;1. School of Automation, Northwestern Polytechnical University, Xi’an, Shaanxi 710072, PR China;2. DRUID, IRISA, University of Rennes 1, Rue E. Branly, 22300 Lannion, France;1. Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, 141980 Dubna, Russia;2. Institute of Mechanics, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria;1. Department of Electrical and Computer Engineering, Democritus University of Thrace, 67100 Xanthi, Greece;2. Department of Pathology and Laboratory Medicine, Perelman School of Medicine, University of Pennsylvania and The Children’s Hospital of Philadelphia, Philadelphia, PA 19104, USA;1. Department of Biological Sciences, Benedictine University, Lisle, IL, USA;2. Department of Mathematical and Computational Sciences, Benedictine University, Lisle, IL, USA;3. Northern Research Station, USDA Forest Service, Morgantown, WV, USA;1. Instituto de Física, Universidade Federal do Rio Grande do Sul, Caixa Postal 15051, CEP 91501-970, Porto Alegre, RS, Brazil;2. Departamento de Física, Instituto de Física e Matemática, Universidade Federal de Pelotas, Caixa Postal 354, CEP 96010-900, Pelotas, RS, Brazil |
| |
| Abstract: | Nanomold is the most important part for the nanoimprint technique which determines the obtained feature size. We prepared relievo nanomolds by selectively etching of the a-Si/ SiNx multilayer thin-film deposited by a PECVD system. SEM results showed that the mold feature sizes were controllable on the nanometer scale and the structures depended on the conditions of the film preparation and the following etching process. Ultrasonic processing and short etching time are necessary to get the desired patterns of good quality by the chemically selective etching process, especially for strips thinner than 20 nm. The substrate surface morphology also affects the mold structures greatly. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
